Gate-Tunable Kinetic Inductance in Proximitized Nanowires

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Gate-Tunable Kinetic Inductance in Proximitized Nanowires. / Splitthoff, Lukas Johannes; Bargerbos, Arno; Grunhaupt, Lukas; Pita-Vidal, Marta; Wesdorp, Jaap Joachim; Liu, Yu; Kou, Angela; Andersen, Christian Kraglund; van Heck, Bernard.

In: Physical Review Applied, Vol. 18, No. 2, 024074, 29.08.2022.

Research output: Contribution to journal › Journal article › Research › peer-review

Harvard

Splitthoff, LJ, Bargerbos, A, Grunhaupt, L, Pita-Vidal, M, Wesdorp, JJ, Liu, Y, Kou, A, Andersen, CK & van Heck, B 2022, 'Gate-Tunable Kinetic Inductance in Proximitized Nanowires', Physical Review Applied, vol. 18, no. 2, 024074. https://doi.org/10.1103/PhysRevApplied.18.024074

APA

Splitthoff, L. J., Bargerbos, A., Grunhaupt, L., Pita-Vidal, M., Wesdorp, J. J., Liu, Y., Kou, A., Andersen, C. K., & van Heck, B. (2022). Gate-Tunable Kinetic Inductance in Proximitized Nanowires. Physical Review Applied, 18(2), [024074]. https://doi.org/10.1103/PhysRevApplied.18.024074

Vancouver

Splitthoff LJ, Bargerbos A, Grunhaupt L, Pita-Vidal M, Wesdorp JJ, Liu Y et al. Gate-Tunable Kinetic Inductance in Proximitized Nanowires. Physical Review Applied. 2022 Aug 29;18(2). 024074. https://doi.org/10.1103/PhysRevApplied.18.024074

Author

Splitthoff, Lukas Johannes ; Bargerbos, Arno ; Grunhaupt, Lukas ; Pita-Vidal, Marta ; Wesdorp, Jaap Joachim ; Liu, Yu ; Kou, Angela ; Andersen, Christian Kraglund ; van Heck, Bernard. / Gate-Tunable Kinetic Inductance in Proximitized Nanowires. In: Physical Review Applied. 2022 ; Vol. 18, No. 2.

Bibtex

@article{9196943426b644e796ab49ff23fdf48f,
title = "Gate-Tunable Kinetic Inductance in Proximitized Nanowires",
abstract = "We report the detection of a gate-tunable kinetic inductance in a hybrid InAs/Al nanowire. For this purpose, we embed the nanowire into a quarter-wave coplanar waveguide resonator and measure the res-onance frequency of the circuit. We find that the resonance frequency can be changed via the gate voltage that controls the electron density of the proximitized semiconductor and thus the nanowire inductance. Applying Mattis-Bardeen theory, we extract the gate dependence of the normal-state conductivity of the nanowire, as well as its superconducting gap. Our measurements complement existing characterization methods for hybrid nanowires and provide a useful tool for gate-controlled superconducting electronics.",
author = "Splitthoff, {Lukas Johannes} and Arno Bargerbos and Lukas Grunhaupt and Marta Pita-Vidal and Wesdorp, {Jaap Joachim} and Yu Liu and Angela Kou and Andersen, {Christian Kraglund} and {van Heck}, Bernard",
year = "2022",
month = aug,
day = "29",
doi = "10.1103/PhysRevApplied.18.024074",
language = "English",
volume = "18",
journal = "Physical Review Applied",
issn = "2331-7019",
publisher = "American Physical Society",
number = "2",

}

RIS

TY - JOUR

T1 - Gate-Tunable Kinetic Inductance in Proximitized Nanowires

AU - Splitthoff, Lukas Johannes

AU - Bargerbos, Arno

AU - Grunhaupt, Lukas

AU - Pita-Vidal, Marta

AU - Wesdorp, Jaap Joachim

AU - Liu, Yu

AU - Kou, Angela

AU - Andersen, Christian Kraglund

AU - van Heck, Bernard

PY - 2022/8/29

Y1 - 2022/8/29

N2 - We report the detection of a gate-tunable kinetic inductance in a hybrid InAs/Al nanowire. For this purpose, we embed the nanowire into a quarter-wave coplanar waveguide resonator and measure the res-onance frequency of the circuit. We find that the resonance frequency can be changed via the gate voltage that controls the electron density of the proximitized semiconductor and thus the nanowire inductance. Applying Mattis-Bardeen theory, we extract the gate dependence of the normal-state conductivity of the nanowire, as well as its superconducting gap. Our measurements complement existing characterization methods for hybrid nanowires and provide a useful tool for gate-controlled superconducting electronics.

AB - We report the detection of a gate-tunable kinetic inductance in a hybrid InAs/Al nanowire. For this purpose, we embed the nanowire into a quarter-wave coplanar waveguide resonator and measure the res-onance frequency of the circuit. We find that the resonance frequency can be changed via the gate voltage that controls the electron density of the proximitized semiconductor and thus the nanowire inductance. Applying Mattis-Bardeen theory, we extract the gate dependence of the normal-state conductivity of the nanowire, as well as its superconducting gap. Our measurements complement existing characterization methods for hybrid nanowires and provide a useful tool for gate-controlled superconducting electronics.

U2 - 10.1103/PhysRevApplied.18.024074

DO - 10.1103/PhysRevApplied.18.024074

M3 - Journal article

VL - 18

JO - Physical Review Applied

JF - Physical Review Applied

SN - 2331-7019

IS - 2

M1 - 024074

ER -

ID: 319152106