Measuring the charge and spin states of electrons on individual dopant atoms in silicon
Research output: Contribution to journal › Journal article › Research › peer-review
Original language | English |
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Book series | Topics in Applied Physics |
Volume | 115 |
Pages (from-to) | 169-182 |
Number of pages | 13 |
ISSN | 0303-4216 |
Publication status | Published - 2009 |
ID: 18478364