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Self-assembled InN quantum dots on side facets of GaN nanowires. / Bi, Zhaoxia; Ek, Martin; Stankevic, Tomas; Colvin, Jovana; Hjort, Martin; Lindgren, David; Lenrick, Filip; Johansson, Jonas; Wallenberg, L. Reine; Timm, Rainer; Feidenhans'l, Robert; Mikkelsen, Anders; Borgstrom, Magnus T.; Gustafsson, Anders; Ohlsson, B. Jonas; Monemar, Bo; Samuelson, Lars.
In:
Journal of Applied Physics, Vol. 123, No. 16, 164302, 28.04.2018.
Research output: Contribution to journal › Journal article › Research › peer-review
Harvard
Bi, Z, Ek, M, Stankevic, T, Colvin, J, Hjort, M, Lindgren, D, Lenrick, F, Johansson, J, Wallenberg, LR, Timm, R
, Feidenhans'l, R, Mikkelsen, A, Borgstrom, MT, Gustafsson, A, Ohlsson, BJ, Monemar, B & Samuelson, L 2018, '
Self-assembled InN quantum dots on side facets of GaN nanowires',
Journal of Applied Physics, vol. 123, no. 16, 164302.
https://doi.org/10.1063/1.5022756APA
Bi, Z., Ek, M., Stankevic, T., Colvin, J., Hjort, M., Lindgren, D., Lenrick, F., Johansson, J., Wallenberg, L. R., Timm, R.
, Feidenhans'l, R., Mikkelsen, A., Borgstrom, M. T., Gustafsson, A., Ohlsson, B. J., Monemar, B., & Samuelson, L. (2018).
Self-assembled InN quantum dots on side facets of GaN nanowires.
Journal of Applied Physics,
123(16), [164302].
https://doi.org/10.1063/1.5022756Vancouver
Bi Z, Ek M, Stankevic T, Colvin J, Hjort M, Lindgren D et al.
Self-assembled InN quantum dots on side facets of GaN nanowires.
Journal of Applied Physics. 2018 Apr 28;123(16). 164302.
https://doi.org/10.1063/1.5022756Author
Bi, Zhaoxia ; Ek, Martin ; Stankevic, Tomas ; Colvin, Jovana ; Hjort, Martin ; Lindgren, David ; Lenrick, Filip ; Johansson, Jonas ; Wallenberg, L. Reine ; Timm, Rainer ; Feidenhans'l, Robert ; Mikkelsen, Anders ; Borgstrom, Magnus T. ; Gustafsson, Anders ; Ohlsson, B. Jonas ; Monemar, Bo ; Samuelson, Lars. / Self-assembled InN quantum dots on side facets of GaN nanowires. In: Journal of Applied Physics. 2018 ; Vol. 123, No. 16.
Bibtex
@article{6cf48080d009483b9508f5de42de5aa0,
title = "Self-assembled InN quantum dots on side facets of GaN nanowires",
author = "Zhaoxia Bi and Martin Ek and Tomas Stankevic and Jovana Colvin and Martin Hjort and David Lindgren and Filip Lenrick and Jonas Johansson and Wallenberg, {L. Reine} and Rainer Timm and Robert Feidenhans'l and Anders Mikkelsen and Borgstrom, {Magnus T.} and Anders Gustafsson and Ohlsson, {B. Jonas} and Bo Monemar and Lars Samuelson",
note = "[Qdev]",
year = "2018",
month = apr,
day = "28",
doi = "10.1063/1.5022756",
language = "English",
volume = "123",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics",
number = "16",
}
RIS
TY - JOUR
T1 - Self-assembled InN quantum dots on side facets of GaN nanowires
AU - Bi, Zhaoxia
AU - Ek, Martin
AU - Stankevic, Tomas
AU - Colvin, Jovana
AU - Hjort, Martin
AU - Lindgren, David
AU - Lenrick, Filip
AU - Johansson, Jonas
AU - Wallenberg, L. Reine
AU - Timm, Rainer
AU - Feidenhans'l, Robert
AU - Mikkelsen, Anders
AU - Borgstrom, Magnus T.
AU - Gustafsson, Anders
AU - Ohlsson, B. Jonas
AU - Monemar, Bo
AU - Samuelson, Lars
N1 - [Qdev]
PY - 2018/4/28
Y1 - 2018/4/28
U2 - 10.1063/1.5022756
DO - 10.1063/1.5022756
M3 - Journal article
VL - 123
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 16
M1 - 164302
ER -
