Diluted Oxide Interfaces with Tunable Ground States

Research output: Contribution to journalJournal articleResearchpeer-review

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Diluted Oxide Interfaces with Tunable Ground States. / Gan, Yulin; Christensen, Dennis Valbjorn; Zhang, Yu; Zhang, Hongrui; Krishnan, Dileep; Zhong, Zhicheng; Niu, Wei; Carrad, Damon James; Norrman, Kion; von Soosten, Merlin; Jespersen, Thomas Sand; Shen, Baogen; Gauquelin, Nicolas; Verbeeck, Johan; Sun, Jirong; Pryds, Nini; Chen, Yunzhong.

In: Advanced Materials, Vol. 31, No. 10, 1805970, 08.03.2019.

Research output: Contribution to journalJournal articleResearchpeer-review

Harvard

Gan, Y, Christensen, DV, Zhang, Y, Zhang, H, Krishnan, D, Zhong, Z, Niu, W, Carrad, DJ, Norrman, K, von Soosten, M, Jespersen, TS, Shen, B, Gauquelin, N, Verbeeck, J, Sun, J, Pryds, N & Chen, Y 2019, 'Diluted Oxide Interfaces with Tunable Ground States', Advanced Materials, vol. 31, no. 10, 1805970. https://doi.org/10.1002/adma.201805970

APA

Gan, Y., Christensen, D. V., Zhang, Y., Zhang, H., Krishnan, D., Zhong, Z., Niu, W., Carrad, D. J., Norrman, K., von Soosten, M., Jespersen, T. S., Shen, B., Gauquelin, N., Verbeeck, J., Sun, J., Pryds, N., & Chen, Y. (2019). Diluted Oxide Interfaces with Tunable Ground States. Advanced Materials, 31(10), [1805970]. https://doi.org/10.1002/adma.201805970

Vancouver

Gan Y, Christensen DV, Zhang Y, Zhang H, Krishnan D, Zhong Z et al. Diluted Oxide Interfaces with Tunable Ground States. Advanced Materials. 2019 Mar 8;31(10). 1805970. https://doi.org/10.1002/adma.201805970

Author

Gan, Yulin ; Christensen, Dennis Valbjorn ; Zhang, Yu ; Zhang, Hongrui ; Krishnan, Dileep ; Zhong, Zhicheng ; Niu, Wei ; Carrad, Damon James ; Norrman, Kion ; von Soosten, Merlin ; Jespersen, Thomas Sand ; Shen, Baogen ; Gauquelin, Nicolas ; Verbeeck, Johan ; Sun, Jirong ; Pryds, Nini ; Chen, Yunzhong. / Diluted Oxide Interfaces with Tunable Ground States. In: Advanced Materials. 2019 ; Vol. 31, No. 10.

Bibtex

@article{2c76151f288745189fe8b556c6417a0c,
title = "Diluted Oxide Interfaces with Tunable Ground States",
keywords = "2D electron liquid, anomalous Hall effect, metal-insulator transitions, oxide interfaces, superconductivity",
author = "Yulin Gan and Christensen, {Dennis Valbjorn} and Yu Zhang and Hongrui Zhang and Dileep Krishnan and Zhicheng Zhong and Wei Niu and Carrad, {Damon James} and Kion Norrman and {von Soosten}, Merlin and Jespersen, {Thomas Sand} and Baogen Shen and Nicolas Gauquelin and Johan Verbeeck and Jirong Sun and Nini Pryds and Yunzhong Chen",
note = "[Qdev]",
year = "2019",
month = mar,
day = "8",
doi = "10.1002/adma.201805970",
language = "English",
volume = "31",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley - V C H Verlag GmbH & Co. KGaA",
number = "10",

}

RIS

TY - JOUR

T1 - Diluted Oxide Interfaces with Tunable Ground States

AU - Gan, Yulin

AU - Christensen, Dennis Valbjorn

AU - Zhang, Yu

AU - Zhang, Hongrui

AU - Krishnan, Dileep

AU - Zhong, Zhicheng

AU - Niu, Wei

AU - Carrad, Damon James

AU - Norrman, Kion

AU - von Soosten, Merlin

AU - Jespersen, Thomas Sand

AU - Shen, Baogen

AU - Gauquelin, Nicolas

AU - Verbeeck, Johan

AU - Sun, Jirong

AU - Pryds, Nini

AU - Chen, Yunzhong

N1 - [Qdev]

PY - 2019/3/8

Y1 - 2019/3/8

KW - 2D electron liquid

KW - anomalous Hall effect

KW - metal-insulator transitions

KW - oxide interfaces

KW - superconductivity

U2 - 10.1002/adma.201805970

DO - 10.1002/adma.201805970

M3 - Journal article

C2 - 30637817

VL - 31

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 10

M1 - 1805970

ER -

ID: 216256963