Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors
Research output: Contribution to journal › Journal article › Research › peer-review
| Original language | English |
|---|---|
| Article number | 064001 |
| Journal | Nanotechnology |
| Volume | 30 |
| Issue number | 6 |
| Number of pages | 8 |
| ISSN | 0957-4484 |
| DOIs | |
| Publication status | Published - 8 Feb 2019 |
Bibliographical note
[Qdev]
- nanowire, gate-all-around, GAA, field-effect transistor, nanowire alignment
Research areas
Links
- https://arxiv.org/pdf/1810.03359
Submitted manuscript
ID: 216157829