Simulations of the dynamics of quantum impurity problems with matrix product states
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Simulations of the dynamics of quantum impurity problems with matrix product states. / Wauters, Matteo M.; Chung, Chia Min; Maffi, Lorenzo; Burrello, Michele.
In: Physical Review B, Vol. 109, No. 11, 115101, 2024.Research output: Contribution to journal › Journal article › Research › peer-review
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TY - JOUR
T1 - Simulations of the dynamics of quantum impurity problems with matrix product states
AU - Wauters, Matteo M.
AU - Chung, Chia Min
AU - Maffi, Lorenzo
AU - Burrello, Michele
N1 - Publisher Copyright: © 2024 American Physical Society.
PY - 2024
Y1 - 2024
N2 - The Anderson impurity model is a paradigmatic example in the study of strongly correlated quantum systems and describes an interacting quantum dot coupled to electronic leads. Here we investigate its dynamics following a quantum quench based on matrix product state simulations. We examine the behavior of its impurity magnetization. Its relaxation allows us to extract the predicted scaling of the Kondo temperature as a function of the impurity-lead hybridization and quantum dot repulsion. Additionally, our simulations provide estimates of the currents in the nonequilibrium quasisteady state appearing after the quench. Through their values, we examine the dependence of the conductance on the voltage bias Vb and on the impurity chemical potential Vg, which displays a zero-bias Kondo peak. Our results are relevant for transport measurements in Coulomb blockaded devices, and, in particular, in quantum dots induced in nanowires.
AB - The Anderson impurity model is a paradigmatic example in the study of strongly correlated quantum systems and describes an interacting quantum dot coupled to electronic leads. Here we investigate its dynamics following a quantum quench based on matrix product state simulations. We examine the behavior of its impurity magnetization. Its relaxation allows us to extract the predicted scaling of the Kondo temperature as a function of the impurity-lead hybridization and quantum dot repulsion. Additionally, our simulations provide estimates of the currents in the nonequilibrium quasisteady state appearing after the quench. Through their values, we examine the dependence of the conductance on the voltage bias Vb and on the impurity chemical potential Vg, which displays a zero-bias Kondo peak. Our results are relevant for transport measurements in Coulomb blockaded devices, and, in particular, in quantum dots induced in nanowires.
U2 - 10.1103/PhysRevB.109.115101
DO - 10.1103/PhysRevB.109.115101
M3 - Journal article
AN - SCOPUS:85186318871
VL - 109
JO - Physical Review B
JF - Physical Review B
SN - 2469-9950
IS - 11
M1 - 115101
ER -
ID: 389904731