Gate-Controlled Supercurrent in Epitaxial Al/InAs Nanowires

Research output: Contribution to journal › Journal article › Research › peer-review

Standard

Gate-Controlled Supercurrent in Epitaxial Al/InAs Nanowires. / Elalaily, Tosson; Kurtossy, Oliver; Scherubl, Zoltan; Berke, Martin; Fulop, Gergo; Lukacs, Istvan Endre; Kanne, Thomas; Nygard, Jesper; Watanabe, Kenji; Taniguchi, Takashi; Makk, Peter; Csonka, Szabolcs.

In: Nano Letters, Vol. 21, No. 22, 24.11.2021, p. 9684-9690.

Research output: Contribution to journal › Journal article › Research › peer-review

Harvard

Elalaily, T, Kurtossy, O, Scherubl, Z, Berke, M, Fulop, G, Lukacs, IE, Kanne, T, Nygard, J, Watanabe, K, Taniguchi, T, Makk, P & Csonka, S 2021, 'Gate-Controlled Supercurrent in Epitaxial Al/InAs Nanowires', Nano Letters, vol. 21, no. 22, pp. 9684-9690. https://doi.org/10.1021/acs.nanolett.1c03493

APA

Elalaily, T., Kurtossy, O., Scherubl, Z., Berke, M., Fulop, G., Lukacs, I. E., Kanne, T., Nygard, J., Watanabe, K., Taniguchi, T., Makk, P., & Csonka, S. (2021). Gate-Controlled Supercurrent in Epitaxial Al/InAs Nanowires. Nano Letters, 21(22), 9684-9690. https://doi.org/10.1021/acs.nanolett.1c03493

Vancouver

Elalaily T, Kurtossy O, Scherubl Z, Berke M, Fulop G, Lukacs IE et al. Gate-Controlled Supercurrent in Epitaxial Al/InAs Nanowires. Nano Letters. 2021 Nov 24;21(22):9684-9690. https://doi.org/10.1021/acs.nanolett.1c03493

Author

Elalaily, Tosson ; Kurtossy, Oliver ; Scherubl, Zoltan ; Berke, Martin ; Fulop, Gergo ; Lukacs, Istvan Endre ; Kanne, Thomas ; Nygard, Jesper ; Watanabe, Kenji ; Taniguchi, Takashi ; Makk, Peter ; Csonka, Szabolcs. / Gate-Controlled Supercurrent in Epitaxial Al/InAs Nanowires. In: Nano Letters. 2021 ; Vol. 21, No. 22. pp. 9684-9690.

Bibtex

@article{86a4c1decafb4588b78ae2242fea5f3e,
title = "Gate-Controlled Supercurrent in Epitaxial Al/InAs Nanowires",
abstract = "Gate-controlled supercurrent (GCS) in superconducting nanobridges has recently attracted attention as a means to create superconducting switches. Despite the clear advantages for applications, the microscopic mechanism of this effect is still under debate. In this work, we realize GCS for the first time in a highly crystalline superconductor epitaxially grown on an InAs nanowire. We show that the supercurrent in the epitaxial Al layer can be switched to the normal state by applying similar to +/- 23 V on a bottom gate insulated from the nanowire by a crystalline hBN layer. Our extensive study of the temperature and magnetic field dependencies suggests that the electric field is unlikely to be the origin of GCS in our device. Though hot electron injection alone cannot explain our experimental findings, a very recent non-equilibrium phonons based picture is compatible with most of our results.",
keywords = "field effect, epitaxial superconductors, nanowire, gate-controlled supercurrent, hot electron injection, phonons, MAGNETIC-FIELD",
author = "Tosson Elalaily and Oliver Kurtossy and Zoltan Scherubl and Martin Berke and Gergo Fulop and Lukacs, {Istvan Endre} and Thomas Kanne and Jesper Nygard and Kenji Watanabe and Takashi Taniguchi and Peter Makk and Szabolcs Csonka",
year = "2021",
month = nov,
day = "24",
doi = "10.1021/acs.nanolett.1c03493",
language = "English",
volume = "21",
pages = "9684--9690",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "22",

}

RIS

TY - JOUR

T1 - Gate-Controlled Supercurrent in Epitaxial Al/InAs Nanowires

AU - Elalaily, Tosson

AU - Kurtossy, Oliver

AU - Scherubl, Zoltan

AU - Berke, Martin

AU - Fulop, Gergo

AU - Lukacs, Istvan Endre

AU - Kanne, Thomas

AU - Nygard, Jesper

AU - Watanabe, Kenji

AU - Taniguchi, Takashi

AU - Makk, Peter

AU - Csonka, Szabolcs

PY - 2021/11/24

Y1 - 2021/11/24

N2 - Gate-controlled supercurrent (GCS) in superconducting nanobridges has recently attracted attention as a means to create superconducting switches. Despite the clear advantages for applications, the microscopic mechanism of this effect is still under debate. In this work, we realize GCS for the first time in a highly crystalline superconductor epitaxially grown on an InAs nanowire. We show that the supercurrent in the epitaxial Al layer can be switched to the normal state by applying similar to +/- 23 V on a bottom gate insulated from the nanowire by a crystalline hBN layer. Our extensive study of the temperature and magnetic field dependencies suggests that the electric field is unlikely to be the origin of GCS in our device. Though hot electron injection alone cannot explain our experimental findings, a very recent non-equilibrium phonons based picture is compatible with most of our results.

AB - Gate-controlled supercurrent (GCS) in superconducting nanobridges has recently attracted attention as a means to create superconducting switches. Despite the clear advantages for applications, the microscopic mechanism of this effect is still under debate. In this work, we realize GCS for the first time in a highly crystalline superconductor epitaxially grown on an InAs nanowire. We show that the supercurrent in the epitaxial Al layer can be switched to the normal state by applying similar to +/- 23 V on a bottom gate insulated from the nanowire by a crystalline hBN layer. Our extensive study of the temperature and magnetic field dependencies suggests that the electric field is unlikely to be the origin of GCS in our device. Though hot electron injection alone cannot explain our experimental findings, a very recent non-equilibrium phonons based picture is compatible with most of our results.

KW - field effect

KW - epitaxial superconductors

KW - nanowire

KW - gate-controlled supercurrent

KW - hot electron injection

KW - phonons

KW - MAGNETIC-FIELD

U2 - 10.1021/acs.nanolett.1c03493

DO - 10.1021/acs.nanolett.1c03493

M3 - Journal article

C2 - 34726405

VL - 21

SP - 9684

EP - 9690

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 22

ER -

ID: 298471168