A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor

Research output: Contribution to journal › Journal article › Research › peer-review

Standard

A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor. / Hu, Yongjie; Churchill, Hugh; Reilly, David; Xiang, Jie; Lieber, Charles; M. Marcus, Charles.

In: Nature Nanotechnology, Vol. 2, 15.06.2007, p. 622-625.

Research output: Contribution to journal › Journal article › Research › peer-review

Harvard

Hu, Y, Churchill, H, Reilly, D, Xiang, J, Lieber, C & M. Marcus, C 2007, 'A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor', Nature Nanotechnology, vol. 2, pp. 622-625. https://doi.org/10.1038/nnano.2007.302

APA

Hu, Y., Churchill, H., Reilly, D., Xiang, J., Lieber, C., & M. Marcus, C. (2007). A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor. Nature Nanotechnology, 2, 622-625. https://doi.org/10.1038/nnano.2007.302

Vancouver

Hu Y, Churchill H, Reilly D, Xiang J, Lieber C, M. Marcus C. A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor. Nature Nanotechnology. 2007 Jun 15;2:622-625. https://doi.org/10.1038/nnano.2007.302

Author

Hu, Yongjie ; Churchill, Hugh ; Reilly, David ; Xiang, Jie ; Lieber, Charles ; M. Marcus, Charles. / A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor. In: Nature Nanotechnology. 2007 ; Vol. 2. pp. 622-625.

Bibtex

@article{2e8490945b004925b344f9abc4d7fd00,
title = "A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor",
abstract = "Coupled electron spins in semiconductor double quantum dots hold promise as the basis for solid-state qubits. To date, most experiments have used III-V materials, in which coherence is limited by hyperfine interactions. Ge/Si heterostructure nanowires seem ideally suited to overcome this limitation: the predominance of spin-zero nuclei suppresses the hyperfine interaction and chemical synthesis creates a clean and defect-free system with highly controllable properties. Here we present a top gate-defined double quantum dot based on Ge/Si heterostructure nanowires with fully tunable coupling between the dots and to the leads. We also demonstrate a novel approach to charge sensing in a one-dimensional nanostructure by capacitively coupling the double dot to a single dot on an adjacent nanowire. The double quantum dot and integrated charge sensor serve as an essential building block required to form a solid-state spin qubit free of nuclear spin.",
keywords = "cond-mat.mes-hall, cond-mat.mtrl-sci",
author = "Yongjie Hu and Hugh Churchill and David Reilly and Jie Xiang and Charles Lieber and {M. Marcus}, Charles",
year = "2007",
month = jun,
day = "15",
doi = "10.1038/nnano.2007.302",
language = "English",
volume = "2",
pages = "622--625",
journal = "Nature Nanotechnology",
issn = "1748-3387",
publisher = "nature publishing group",

}

RIS

TY - JOUR

T1 - A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor

AU - Hu, Yongjie

AU - Churchill, Hugh

AU - Reilly, David

AU - Xiang, Jie

AU - Lieber, Charles

AU - M. Marcus, Charles

PY - 2007/6/15

Y1 - 2007/6/15

N2 - Coupled electron spins in semiconductor double quantum dots hold promise as the basis for solid-state qubits. To date, most experiments have used III-V materials, in which coherence is limited by hyperfine interactions. Ge/Si heterostructure nanowires seem ideally suited to overcome this limitation: the predominance of spin-zero nuclei suppresses the hyperfine interaction and chemical synthesis creates a clean and defect-free system with highly controllable properties. Here we present a top gate-defined double quantum dot based on Ge/Si heterostructure nanowires with fully tunable coupling between the dots and to the leads. We also demonstrate a novel approach to charge sensing in a one-dimensional nanostructure by capacitively coupling the double dot to a single dot on an adjacent nanowire. The double quantum dot and integrated charge sensor serve as an essential building block required to form a solid-state spin qubit free of nuclear spin.

AB - Coupled electron spins in semiconductor double quantum dots hold promise as the basis for solid-state qubits. To date, most experiments have used III-V materials, in which coherence is limited by hyperfine interactions. Ge/Si heterostructure nanowires seem ideally suited to overcome this limitation: the predominance of spin-zero nuclei suppresses the hyperfine interaction and chemical synthesis creates a clean and defect-free system with highly controllable properties. Here we present a top gate-defined double quantum dot based on Ge/Si heterostructure nanowires with fully tunable coupling between the dots and to the leads. We also demonstrate a novel approach to charge sensing in a one-dimensional nanostructure by capacitively coupling the double dot to a single dot on an adjacent nanowire. The double quantum dot and integrated charge sensor serve as an essential building block required to form a solid-state spin qubit free of nuclear spin.

KW - cond-mat.mes-hall

KW - cond-mat.mtrl-sci

U2 - 10.1038/nnano.2007.302

DO - 10.1038/nnano.2007.302

M3 - Journal article

C2 - 18654386

VL - 2

SP - 622

EP - 625

JO - Nature Nanotechnology

JF - Nature Nanotechnology

SN - 1748-3387

ER -

ID: 38327276