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Wet etch methods for InAs nanowire patterning and self-aligned electrical contacts. / Fülöp, G.; d'Hollosy, S.; Hofstetter, L.; Baumgartner, A.; Nygård, Jesper; Schönenberger, C.; Csonka, S.
I:
Nanotechnology, Bind 27, Nr. 19, 195303, 2016.
Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt
Harvard
Fülöp, G, d'Hollosy, S, Hofstetter, L, Baumgartner, A
, Nygård, J, Schönenberger, C & Csonka, S 2016, '
Wet etch methods for InAs nanowire patterning and self-aligned electrical contacts',
Nanotechnology, bind 27, nr. 19, 195303.
https://doi.org/10.1088/0957-4484/27/19/195303APA
Fülöp, G., d'Hollosy, S., Hofstetter, L., Baumgartner, A.
, Nygård, J., Schönenberger, C., & Csonka, S. (2016).
Wet etch methods for InAs nanowire patterning and self-aligned electrical contacts.
Nanotechnology,
27(19), [195303].
https://doi.org/10.1088/0957-4484/27/19/195303Vancouver
Fülöp G, d'Hollosy S, Hofstetter L, Baumgartner A
, Nygård J, Schönenberger C o.a.
Wet etch methods for InAs nanowire patterning and self-aligned electrical contacts.
Nanotechnology. 2016;27(19). 195303.
https://doi.org/10.1088/0957-4484/27/19/195303Author
Fülöp, G. ; d'Hollosy, S. ; Hofstetter, L. ; Baumgartner, A. ; Nygård, Jesper ; Schönenberger, C. ; Csonka, S. / Wet etch methods for InAs nanowire patterning and self-aligned electrical contacts. I: Nanotechnology. 2016 ; Bind 27, Nr. 19.
Bibtex
@article{97411b1386104fcc9b98f628a4c07d67,
title = "Wet etch methods for InAs nanowire patterning and self-aligned electrical contacts",
keywords = "indium arsenide, nanowire, patterning, lithography, wet etch, quantum dot, galvanic",
author = "G. F{\"u}l{\"o}p and S. d'Hollosy and L. Hofstetter and A. Baumgartner and Jesper Nyg{\aa}rd and C. Sch{\"o}nenberger and S. Csonka",
note = "[QDev]",
year = "2016",
doi = "10.1088/0957-4484/27/19/195303",
language = "English",
volume = "27",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "Institute of Physics Publishing Ltd",
number = "19",
}
RIS
TY - JOUR
T1 - Wet etch methods for InAs nanowire patterning and self-aligned electrical contacts
AU - Fülöp, G.
AU - d'Hollosy, S.
AU - Hofstetter, L.
AU - Baumgartner, A.
AU - Nygård, Jesper
AU - Schönenberger, C.
AU - Csonka, S.
N1 - [QDev]
PY - 2016
Y1 - 2016
KW - indium arsenide
KW - nanowire
KW - patterning
KW - lithography
KW - wet etch
KW - quantum dot
KW - galvanic
U2 - 10.1088/0957-4484/27/19/195303
DO - 10.1088/0957-4484/27/19/195303
M3 - Journal article
C2 - 27040175
VL - 27
JO - Nanotechnology
JF - Nanotechnology
SN - 0957-4484
IS - 19
M1 - 195303
ER -
