Sources of negative tunneling magnetoresistance in multilevel quantum dots with ferromagnetic contacts

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We analyze distinct sources of spin-dependent energy level shifts and their impact on the tunneling magnetoresistance (TMR) of interacting quantum dots coupled to collinearly polarized ferromagnetic leads. Level shifts due to virtual charge fluctuations can be quantitatively evaluated within a diagrammatic representation of our transport theory. The theory is valid for multilevel quantum dot systems and we exemplarily apply it to carbon nanotube quantum dots, where we show that the presence of many levels, among them of excited states, can qualitatively influence the TMR effect.
OriginalsprogEngelsk
Artikelnummer045313
TidsskriftPhysical Review B Condensed Matter
Vol/bind85
Udgave nummer4
Antal sider8
ISSN0163-1829
DOI
StatusUdgivet - 13 jan. 2012

ID: 36141484