Signatures of Gate-Driven Out-of-Equilibrium Superconductivity in Ta/InAs Nanowires
Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt
Dokumenter
- acsnano.2c10877
Forlagets udgivne version, 3,35 MB, PDF-dokument
Understanding the microscopic origin of the gate-controlled supercurrent (GCS) in superconducting nanobridges is crucial for engineering superconducting switches suitable for a variety of electronic applications. The origin of GCS is controversial, and various mechanisms have been proposed to explain it. In this work, we have investigated the GCS in a Ta layer deposited on the surface of InAs nanowires. Comparison between switching current distributions at opposite gate polarities and between the gate dependence of two opposite side gates with different nanowire-gate spacings shows that the GCS is determined by the power dissipated by the gate leakage. We also found a substantial difference between the influence of the gate and elevated bath temperature on the magnetic field dependence of the supercurrent. Detailed analysis of the switching dynamics at high gate voltages shows that the device is driven into the multiple phase slips regime by high-energy fluctuations arising from the leakage current.
| Originalsprog | Engelsk |
|---|---|
| Tidsskrift | ACS Nano |
| Vol/bind | 17 |
| Udgave nummer | 6 |
| Sider (fra-til) | 5528-5535 |
| Antal sider | 8 |
| ISSN | 1936-0851 |
| DOI | |
| Status | Udgivet - 28 mar. 2023 |
Bibliografisk note
Funding Information:
This work was funded by the EU’s Horizon 2020 research and innovation program under grant agreement No. 964398 (SUPERGATE), COST Action CA 21144 superqumat, Topograph FlagERA, the SuperTop QuantERA network, the FET Open AndQC, the OTKA FK-123894 grants, and the VEKOP 2.3.3-15-2017-00015 grant. This research was supported by the Ministry of Innovation and Technology and the National Research, Development and Innovation Office within the Quantum Information National Laboratory of Hungary and by the Quantum Technology National Excellence Program (Project No. 2017-1.2.1-NKP-2017-00001), by the ÚNKP-22-5 New National Excellence Program, the János Bolyai Research Scholarship of the Hungarian Academy of Sciences, ÚNKP-22-2-I-BME-22 New National Excellence Program of the Ministry for Culture and Innovation from the source of the National Research, Development and Innovation Fund, the Carlsberg Foundation, Innovation Fund Denmark, and the Danish National Research Foundation. We thank M. Bjergfelt, D. Carrad, and T. S. Jespersen for their contributions to the development of the hybrid nanowires.
Publisher Copyright:
© 2023 The Authors. Published by American Chemical Society.
ID: 342928009