Signatures of Gate-Driven Out-of-Equilibrium Superconductivity in Ta/InAs Nanowires

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Standard

Signatures of Gate-Driven Out-of-Equilibrium Superconductivity in Ta/InAs Nanowires. / Elalaily, Tosson; Berke, Martin; Kedves, Máté; Fülöp, Gergő; Scherübl, Zoltán; Kanne, Thomas; Nygård, Jesper; Makk, Péter; Csonka, Szabolcs.

I: ACS Nano, Bind 17, Nr. 6, 28.03.2023, s. 5528-5535.

Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt

Harvard

Elalaily, T, Berke, M, Kedves, M, Fülöp, G, Scherübl, Z, Kanne, T, Nygård, J, Makk, P & Csonka, S 2023, 'Signatures of Gate-Driven Out-of-Equilibrium Superconductivity in Ta/InAs Nanowires', ACS Nano, bind 17, nr. 6, s. 5528-5535. https://doi.org/10.1021/acsnano.2c10877

APA

Elalaily, T., Berke, M., Kedves, M., Fülöp, G., Scherübl, Z., Kanne, T., Nygård, J., Makk, P., & Csonka, S. (2023). Signatures of Gate-Driven Out-of-Equilibrium Superconductivity in Ta/InAs Nanowires. ACS Nano, 17(6), 5528-5535. https://doi.org/10.1021/acsnano.2c10877

Vancouver

Elalaily T, Berke M, Kedves M, Fülöp G, Scherübl Z, Kanne T o.a. Signatures of Gate-Driven Out-of-Equilibrium Superconductivity in Ta/InAs Nanowires. ACS Nano. 2023 mar. 28;17(6):5528-5535. https://doi.org/10.1021/acsnano.2c10877

Author

Elalaily, Tosson ; Berke, Martin ; Kedves, Máté ; Fülöp, Gergő ; Scherübl, Zoltán ; Kanne, Thomas ; Nygård, Jesper ; Makk, Péter ; Csonka, Szabolcs. / Signatures of Gate-Driven Out-of-Equilibrium Superconductivity in Ta/InAs Nanowires. I: ACS Nano. 2023 ; Bind 17, Nr. 6. s. 5528-5535.

Bibtex

@article{370c6adc6843435cae2b0577daf85c75,

title = "Signatures of Gate-Driven Out-of-Equilibrium Superconductivity in Ta/InAs Nanowires",

abstract = "Understanding the microscopic origin of the gate-controlled supercurrent (GCS) in superconducting nanobridges is crucial for engineering superconducting switches suitable for a variety of electronic applications. The origin of GCS is controversial, and various mechanisms have been proposed to explain it. In this work, we have investigated the GCS in a Ta layer deposited on the surface of InAs nanowires. Comparison between switching current distributions at opposite gate polarities and between the gate dependence of two opposite side gates with different nanowire-gate spacings shows that the GCS is determined by the power dissipated by the gate leakage. We also found a substantial difference between the influence of the gate and elevated bath temperature on the magnetic field dependence of the supercurrent. Detailed analysis of the switching dynamics at high gate voltages shows that the device is driven into the multiple phase slips regime by high-energy fluctuations arising from the leakage current.",

keywords = "field effect, gate-controlled supercurrent, hot electron injection, nanowire, phase slips, phonons",

author = "Tosson Elalaily and Martin Berke and M{\'a}t{\'e} Kedves and Gerg{\H o} F{\"u}l{\"o}p and Zolt{\'a}n Scher{\"u}bl and Thomas Kanne and Jesper Nyg{\aa}rd and P{\'e}ter Makk and Szabolcs Csonka",

note = "Publisher Copyright: {\textcopyright} 2023 The Authors. Published by American Chemical Society.",

year = "2023",

month = mar,

day = "28",

doi = "10.1021/acsnano.2c10877",

language = "English",

volume = "17",

pages = "5528--5535",

journal = "A C S Nano",

issn = "1936-0851",

publisher = "American Chemical Society",

number = "6",

}

RIS

TY - JOUR

T1 - Signatures of Gate-Driven Out-of-Equilibrium Superconductivity in Ta/InAs Nanowires

AU - Elalaily, Tosson

AU - Berke, Martin

AU - Kedves, Máté

AU - Fülöp, Gergő

AU - Scherübl, Zoltán

AU - Kanne, Thomas

AU - Nygård, Jesper

AU - Makk, Péter

AU - Csonka, Szabolcs

PY - 2023/3/28

Y1 - 2023/3/28

N2 - Understanding the microscopic origin of the gate-controlled supercurrent (GCS) in superconducting nanobridges is crucial for engineering superconducting switches suitable for a variety of electronic applications. The origin of GCS is controversial, and various mechanisms have been proposed to explain it. In this work, we have investigated the GCS in a Ta layer deposited on the surface of InAs nanowires. Comparison between switching current distributions at opposite gate polarities and between the gate dependence of two opposite side gates with different nanowire-gate spacings shows that the GCS is determined by the power dissipated by the gate leakage. We also found a substantial difference between the influence of the gate and elevated bath temperature on the magnetic field dependence of the supercurrent. Detailed analysis of the switching dynamics at high gate voltages shows that the device is driven into the multiple phase slips regime by high-energy fluctuations arising from the leakage current.

AB - Understanding the microscopic origin of the gate-controlled supercurrent (GCS) in superconducting nanobridges is crucial for engineering superconducting switches suitable for a variety of electronic applications. The origin of GCS is controversial, and various mechanisms have been proposed to explain it. In this work, we have investigated the GCS in a Ta layer deposited on the surface of InAs nanowires. Comparison between switching current distributions at opposite gate polarities and between the gate dependence of two opposite side gates with different nanowire-gate spacings shows that the GCS is determined by the power dissipated by the gate leakage. We also found a substantial difference between the influence of the gate and elevated bath temperature on the magnetic field dependence of the supercurrent. Detailed analysis of the switching dynamics at high gate voltages shows that the device is driven into the multiple phase slips regime by high-energy fluctuations arising from the leakage current.

KW - field effect

KW - gate-controlled supercurrent

KW - hot electron injection

KW - nanowire

KW - phase slips

KW - phonons

U2 - 10.1021/acsnano.2c10877

DO - 10.1021/acsnano.2c10877

M3 - Journal article

C2 - 36912466

AN - SCOPUS:85149762201

VL - 17

SP - 5528

EP - 5535

JO - A C S Nano

JF - A C S Nano

SN - 1936-0851

IS - 6

ER -

ID: 342928009

Niels Bohr Institutet