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Quantum point contacts formed in GaAs/GaAlAs heterostructures by shallow etching and overgrowth. / Kristensen, A.; Soerensen, C.B.; Lindelof, P.E.; Bo Jensen, J.; Nygård, J.; Zaffalon, M.; Beuscher, F.; Michel, M.C.; Forchel, A.
I:
Solid-State Electronics, Bind 42, Nr. 7-8, 1998, s. 1103-1107.
Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt
Harvard
Kristensen, A, Soerensen, CB
, Lindelof, PE, Bo Jensen, J
, Nygård, J, Zaffalon, M, Beuscher, F, Michel, MC & Forchel, A 1998, '
Quantum point contacts formed in GaAs/GaAlAs heterostructures by shallow etching and overgrowth',
Solid-State Electronics, bind 42, nr. 7-8, s. 1103-1107.
https://doi.org/doi:10.1016/S0038-1101(97)00310-9APA
Kristensen, A., Soerensen, C. B.
, Lindelof, P. E., Bo Jensen, J.
, Nygård, J., Zaffalon, M., Beuscher, F., Michel, M. C., & Forchel, A. (1998).
Quantum point contacts formed in GaAs/GaAlAs heterostructures by shallow etching and overgrowth.
Solid-State Electronics,
42(7-8), 1103-1107.
https://doi.org/doi:10.1016/S0038-1101(97)00310-9Vancouver
Kristensen A, Soerensen CB
, Lindelof PE, Bo Jensen J
, Nygård J, Zaffalon M o.a.
Quantum point contacts formed in GaAs/GaAlAs heterostructures by shallow etching and overgrowth.
Solid-State Electronics. 1998;42(7-8):1103-1107.
https://doi.org/doi:10.1016/S0038-1101(97)00310-9Author
Kristensen, A. ; Soerensen, C.B. ; Lindelof, P.E. ; Bo Jensen, J. ; Nygård, J. ; Zaffalon, M. ; Beuscher, F. ; Michel, M.C. ; Forchel, A. / Quantum point contacts formed in GaAs/GaAlAs heterostructures by shallow etching and overgrowth. I: Solid-State Electronics. 1998 ; Bind 42, Nr. 7-8. s. 1103-1107.
Bibtex
@article{981a23a074c911dbbee902004c4f4f50,
title = "Quantum point contacts formed in GaAs/GaAlAs heterostructures by shallow etching and overgrowth",
abstract = "Udgivelsesdato: 8 juli 1998",
author = "A. Kristensen and C.B. Soerensen and P.E. Lindelof and {Bo Jensen}, J. and J. Nyg{\aa}rd and M. Zaffalon and F. Beuscher and M.C. Michel and A. Forchel",
note = "{\O}rsted Laboratoriet, Niels Bohr Institutet",
year = "1998",
doi = "doi:10.1016/S0038-1101(97)00310-9",
language = "English",
volume = "42",
pages = "1103--1107",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Pergamon Press",
number = "7-8",
}
RIS
TY - JOUR
T1 - Quantum point contacts formed in GaAs/GaAlAs heterostructures by shallow etching and overgrowth
AU - Kristensen, A.
AU - Soerensen, C.B.
AU - Lindelof, P.E.
AU - Bo Jensen, J.
AU - Nygård, J.
AU - Zaffalon, M.
AU - Beuscher, F.
AU - Michel, M.C.
AU - Forchel, A.
N1 - Ørsted Laboratoriet, Niels Bohr Institutet
PY - 1998
Y1 - 1998
N2 - Udgivelsesdato: 8 juli 1998
AB - Udgivelsesdato: 8 juli 1998
U2 - doi:10.1016/S0038-1101(97)00310-9
DO - doi:10.1016/S0038-1101(97)00310-9
M3 - Journal article
VL - 42
SP - 1103
EP - 1107
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
IS - 7-8
ER -
