AlGaAs/GaAs single electron transistor fabricated without modulation doping

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Standard

AlGaAs/GaAs single electron transistor fabricated without modulation doping. / See , A.M. ; Klochan , O.; Micolich, A.P. ; Aagesen, Martin; Lindelof, Poul Erik.

I: Applied Physics Letters, Bind 96, Nr. 11, 19.03.2010, s. 112104.

Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt

Harvard

See , AM, Klochan , O, Micolich, AP, Aagesen, M & Lindelof, PE 2010, 'AlGaAs/GaAs single electron transistor fabricated without modulation doping', Applied Physics Letters, bind 96, nr. 11, s. 112104. https://doi.org/10.1063/1.3358388

APA

See , A. M., Klochan , O., Micolich, A. P., Aagesen, M., & Lindelof, P. E. (2010). AlGaAs/GaAs single electron transistor fabricated without modulation doping. Applied Physics Letters, 96(11), 112104. https://doi.org/10.1063/1.3358388

Vancouver

See AM, Klochan O, Micolich AP, Aagesen M, Lindelof PE. AlGaAs/GaAs single electron transistor fabricated without modulation doping. Applied Physics Letters. 2010 mar. 19;96(11):112104. https://doi.org/10.1063/1.3358388

Author

See , A.M. ; Klochan , O. ; Micolich, A.P. ; Aagesen, Martin ; Lindelof, Poul Erik. / AlGaAs/GaAs single electron transistor fabricated without modulation doping. I: Applied Physics Letters. 2010 ; Bind 96, Nr. 11. s. 112104.

Bibtex

@article{856ba5e5f5c942728663f5507286cbc2,
title = "AlGaAs/GaAs single electron transistor fabricated without modulation doping",
author = "A.M. See and O. Klochan and A.P. Micolich and Martin Aagesen and Lindelof, {Poul Erik}",
year = "2010",
month = mar,
day = "19",
doi = "10.1063/1.3358388",
language = "English",
volume = "96",
pages = "112104",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "11",

}

RIS

TY - JOUR

T1 - AlGaAs/GaAs single electron transistor fabricated without modulation doping

AU - See , A.M.

AU - Klochan , O.

AU - Micolich, A.P.

AU - Aagesen, Martin

AU - Lindelof, Poul Erik

PY - 2010/3/19

Y1 - 2010/3/19

U2 - 10.1063/1.3358388

DO - 10.1063/1.3358388

M3 - Journal article

VL - 96

SP - 112104

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

ER -

ID: 32192740