Gate reflectometry in dense quantum dot arrays
Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt
Dokumenter
- Ansaloni_2023_New_J._Phys._25_033023
Forlagets udgivne version, 14 MB, PDF-dokument
Silicon quantum devices are maturing from academic single- and two-qubit devices to industrially-fabricated dense quantum-dot (QD) arrays, increasing operational complexity and the need for better pulsed-gate and readout techniques. We perform gate-voltage pulsing and gate-based reflectometry measurements on a dense 2 x 2 array of silicon QDs fabricated in a 300 mm-wafer foundry. Utilizing the strong capacitive couplings within the array, it is sufficient to monitor only one gate electrode via high-frequency reflectometry to establish single-electron occupation in each of the four dots and to detect single-electron movements with high bandwidth. A global top-gate electrode adjusts the overall tunneling times, while linear combinations of side-gate voltages yield detailed charge stability diagrams. To test for spin physics and Pauli spin blockade at finite magnetic fields, we implement symmetric gate-voltage pulses that directly reveal bidirectional interdot charge relaxation as a function of the detuning between two dots. Charge sensing within the array can be established without the involvement of adjacent electron reservoirs, important for scaling such split-gate devices towards longer 2 x N arrays. Our techniques may find use in the scaling of few-dot spin-qubit devices to large-scale quantum processors.
Originalsprog | Engelsk |
---|---|
Artikelnummer | 033023 |
Tidsskrift | New Journal of Physics |
Vol/bind | 25 |
Udgave nummer | 3 |
Antal sider | 15 |
ISSN | 1367-2630 |
DOI | |
Status | Udgivet - 1 mar. 2023 |
Antal downloads er baseret på statistik fra Google Scholar og www.ku.dk
ID: 344426067