Weak localization in a GaAs heterostructure close to population of the second subband
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Standard
Weak localization in a GaAs heterostructure close to population of the second subband. / Hansen, J.E.; Taboryski, Rafael Jozef; Lindelof, P.E.
I: Physical Review B. Condensed Matter and Materials Physics, Nr. 47, 1993, s. 16040-16044.Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning
Harvard
Hansen, JE, Taboryski, RJ & Lindelof, PE 1993, 'Weak localization in a GaAs heterostructure close to population of the second subband', Physical Review B. Condensed Matter and Materials Physics, nr. 47, s. 16040-16044.
APA
Hansen, J. E., Taboryski, R. J., & Lindelof, P. E. (1993). Weak localization in a GaAs heterostructure close to population of the second subband. Physical Review B. Condensed Matter and Materials Physics, (47), 16040-16044.
Vancouver
Hansen JE, Taboryski RJ, Lindelof PE. Weak localization in a GaAs heterostructure close to population of the second subband. Physical Review B. Condensed Matter and Materials Physics. 1993;(47):16040-16044.
Author
Bibtex
@article{22bff7a074cf11dbbee902004c4f4f50,
title = "Weak localization in a GaAs heterostructure close to population of the second subband",
author = "J.E. Hansen and Taboryski, {Rafael Jozef} and P.E. Lindelof",
year = "1993",
language = "English",
pages = "16040--16044",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",
number = "47",
}
RIS
TY - JOUR
T1 - Weak localization in a GaAs heterostructure close to population of the second subband
AU - Hansen, J.E.
AU - Taboryski, Rafael Jozef
AU - Lindelof, P.E.
PY - 1993
Y1 - 1993
M3 - Journal article
SP - 16040
EP - 16044
JO - Physical Review B
JF - Physical Review B
SN - 2469-9950
IS - 47
ER -
ID: 273618