Vibrational sidebands and dissipative tunneling in molecular transistors

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Standard

Vibrational sidebands and dissipative tunneling in molecular transistors. / Braig, S.; Flensberg, Karsten.

I: Physical Review B. Condensed Matter and Materials Physics, Bind 68, 2003, s. 205324.

Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt

Harvard

Braig, S & Flensberg, K 2003, 'Vibrational sidebands and dissipative tunneling in molecular transistors', Physical Review B. Condensed Matter and Materials Physics, bind 68, s. 205324.

APA

Braig, S., & Flensberg, K. (2003). Vibrational sidebands and dissipative tunneling in molecular transistors. Physical Review B. Condensed Matter and Materials Physics, 68, 205324.

Vancouver

Braig S, Flensberg K. Vibrational sidebands and dissipative tunneling in molecular transistors. Physical Review B. Condensed Matter and Materials Physics. 2003;68:205324.

Author

Braig, S. ; Flensberg, Karsten. / Vibrational sidebands and dissipative tunneling in molecular transistors. I: Physical Review B. Condensed Matter and Materials Physics. 2003 ; Bind 68. s. 205324.

Bibtex

@article{79bb947074c411dbbee902004c4f4f50,
title = "Vibrational sidebands and dissipative tunneling in molecular transistors",
author = "S. Braig and Karsten Flensberg",
year = "2003",
language = "English",
volume = "68",
pages = "205324",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",

}

RIS

TY - JOUR

T1 - Vibrational sidebands and dissipative tunneling in molecular transistors

AU - Braig, S.

AU - Flensberg, Karsten

PY - 2003

Y1 - 2003

M3 - Journal article

VL - 68

SP - 205324

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

ER -

ID: 114011