Tunneling broadening of vibrational sidebands in molecular transistors

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Standard

Tunneling broadening of vibrational sidebands in molecular transistors. / Flensberg, Karsten.

I: Physical Review B. Condensed Matter and Materials Physics, Bind 68, 2003, s. 205323.

Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt

Harvard

Flensberg, K 2003, 'Tunneling broadening of vibrational sidebands in molecular transistors', Physical Review B. Condensed Matter and Materials Physics, bind 68, s. 205323.

APA

Flensberg, K. (2003). Tunneling broadening of vibrational sidebands in molecular transistors. Physical Review B. Condensed Matter and Materials Physics, 68, 205323.

Vancouver

Flensberg K. Tunneling broadening of vibrational sidebands in molecular transistors. Physical Review B. Condensed Matter and Materials Physics. 2003;68:205323.

Author

Flensberg, Karsten. / Tunneling broadening of vibrational sidebands in molecular transistors. I: Physical Review B. Condensed Matter and Materials Physics. 2003 ; Bind 68. s. 205323.

Bibtex

@article{79c46e1074c411dbbee902004c4f4f50,
title = "Tunneling broadening of vibrational sidebands in molecular transistors",
author = "Karsten Flensberg",
year = "2003",
language = "English",
volume = "68",
pages = "205323",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",

}

RIS

TY - JOUR

T1 - Tunneling broadening of vibrational sidebands in molecular transistors

AU - Flensberg, Karsten

PY - 2003

Y1 - 2003

M3 - Journal article

VL - 68

SP - 205323

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

ER -

ID: 114015