Quantized large-bias current in the anomalous Floquet-Anderson insulator
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Quantized large-bias current in the anomalous Floquet-Anderson insulator. / Kundu, Arijit; Rudner, Mark; Berg, Erez; Lindner, Netanel H.
I: Physical Review B, Bind 101, Nr. 4, 041403, 08.01.2020.Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt
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TY - JOUR
T1 - Quantized large-bias current in the anomalous Floquet-Anderson insulator
AU - Kundu, Arijit
AU - Rudner, Mark
AU - Berg, Erez
AU - Lindner, Netanel H.
PY - 2020/1/8
Y1 - 2020/1/8
N2 - We study two-terminal transport through two-dimensional periodically driven systems in which all bulk Floquet eigenstates are localized by disorder. We focus on the anomalous Floquet-Anderson insulator (AFAI) phase, a topologically nontrivial phase within this class, which hosts topologically protected chiral edge modes coexisting with its fully localized bulk. We show that the unique properties of the AFAI yield remarkable far-from-equilibrium transport signatures: for a large bias between leads, a quantized amount of charge is transported through the system each driving period. Upon increasing the bias, the chiral Floquet edge mode connecting source to drain becomes fully occupied and the current rapidly approaches its quantized value.
AB - We study two-terminal transport through two-dimensional periodically driven systems in which all bulk Floquet eigenstates are localized by disorder. We focus on the anomalous Floquet-Anderson insulator (AFAI) phase, a topologically nontrivial phase within this class, which hosts topologically protected chiral edge modes coexisting with its fully localized bulk. We show that the unique properties of the AFAI yield remarkable far-from-equilibrium transport signatures: for a large bias between leads, a quantized amount of charge is transported through the system each driving period. Upon increasing the bias, the chiral Floquet edge mode connecting source to drain becomes fully occupied and the current rapidly approaches its quantized value.
U2 - 10.1103/PhysRevB.101.041403
DO - 10.1103/PhysRevB.101.041403
M3 - Journal article
AN - SCOPUS:85078363054
VL - 101
JO - Physical Review B
JF - Physical Review B
SN - 2469-9950
IS - 4
M1 - 041403
ER -
ID: 238867294