Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes

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Standard

Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes. / Ullah, A. R.; Carrad, D. J.; Krogstrup, P.; Nygard, J.; Micolich, A. P.

I: Physical Review Materials, Bind 2, Nr. 2, 025601, 05.02.2018.

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningfagfællebedømt

Harvard

Ullah, AR, Carrad, DJ, Krogstrup, P, Nygard, J & Micolich, AP 2018, 'Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes', Physical Review Materials, bind 2, nr. 2, 025601. https://doi.org/10.1103/PhysRevMaterials.2.025601

APA

Ullah, A. R., Carrad, D. J., Krogstrup, P., Nygard, J., & Micolich, A. P. (2018). Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes. Physical Review Materials, 2(2), [025601]. https://doi.org/10.1103/PhysRevMaterials.2.025601

Vancouver

Ullah AR, Carrad DJ, Krogstrup P, Nygard J, Micolich AP. Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes. Physical Review Materials. 2018 feb 5;2(2). 025601. https://doi.org/10.1103/PhysRevMaterials.2.025601

Author

Ullah, A. R. ; Carrad, D. J. ; Krogstrup, P. ; Nygard, J. ; Micolich, A. P. / Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes. I: Physical Review Materials. 2018 ; Bind 2, Nr. 2.

Bibtex

@article{91beab264d2f4c91acc53698c4b3c381,
title = "Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes",
author = "Ullah, {A. R.} and Carrad, {D. J.} and P. Krogstrup and J. Nygard and Micolich, {A. P.}",
note = "[Qdev]",
year = "2018",
month = "2",
day = "5",
doi = "10.1103/PhysRevMaterials.2.025601",
language = "English",
volume = "2",
journal = "Physical Review Materials",
issn = "2475-9953",
publisher = "American Physical Society",
number = "2",

}

RIS

TY - JOUR

T1 - Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes

AU - Ullah, A. R.

AU - Carrad, D. J.

AU - Krogstrup, P.

AU - Nygard, J.

AU - Micolich, A. P.

N1 - [Qdev]

PY - 2018/2/5

Y1 - 2018/2/5

U2 - 10.1103/PhysRevMaterials.2.025601

DO - 10.1103/PhysRevMaterials.2.025601

M3 - Journal article

VL - 2

JO - Physical Review Materials

JF - Physical Review Materials

SN - 2475-9953

IS - 2

M1 - 025601

ER -

ID: 201003053