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Integration of carbon nanotubes with semiconductor technology : fabriction of hybrid devices by III-V molecular beam epitaxy. / Stobbe, Søren; Lindelof, P.E.; Nygård, J.
I:
Semiconductor Science and Technology, Bind 21, Nr. 11, 17.10.2006, s. S10-S16.
Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt
Harvard
Stobbe, S
, Lindelof, PE & Nygård, J 2006, '
Integration of carbon nanotubes with semiconductor technology: fabriction of hybrid devices by III-V molecular beam epitaxy',
Semiconductor Science and Technology, bind 21, nr. 11, s. S10-S16.
https://doi.org/10.1088/0268-1242/21/11/S02APA
Stobbe, S.
, Lindelof, P. E., & Nygård, J. (2006).
Integration of carbon nanotubes with semiconductor technology: fabriction of hybrid devices by III-V molecular beam epitaxy.
Semiconductor Science and Technology,
21(11), S10-S16.
https://doi.org/10.1088/0268-1242/21/11/S02Vancouver
Stobbe S
, Lindelof PE, Nygård J.
Integration of carbon nanotubes with semiconductor technology: fabriction of hybrid devices by III-V molecular beam epitaxy.
Semiconductor Science and Technology. 2006 okt. 17;21(11):S10-S16.
https://doi.org/10.1088/0268-1242/21/11/S02Author
Stobbe, Søren ; Lindelof, P.E. ; Nygård, J. / Integration of carbon nanotubes with semiconductor technology : fabriction of hybrid devices by III-V molecular beam epitaxy. I: Semiconductor Science and Technology. 2006 ; Bind 21, Nr. 11. s. S10-S16.
Bibtex
@article{cfedbc506c3611dcbee902004c4f4f50,
title = "Integration of carbon nanotubes with semiconductor technology: fabriction of hybrid devices by III-V molecular beam epitaxy",
abstract = "Field-diffect transistors",
author = "S{\o}ren Stobbe and P.E. Lindelof and J. Nyg{\aa}rd",
year = "2006",
month = oct,
day = "17",
doi = "10.1088/0268-1242/21/11/S02",
language = "English",
volume = "21",
pages = "S10--S16",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "Institute of Physics Publishing Ltd",
number = "11",
}
RIS
TY - JOUR
T1 - Integration of carbon nanotubes with semiconductor technology
T2 - fabriction of hybrid devices by III-V molecular beam epitaxy
AU - Stobbe, Søren
AU - Lindelof, P.E.
AU - Nygård, J.
PY - 2006/10/17
Y1 - 2006/10/17
N2 - Field-diffect transistors
AB - Field-diffect transistors
U2 - 10.1088/0268-1242/21/11/S02
DO - 10.1088/0268-1242/21/11/S02
M3 - Journal article
VL - 21
SP - S10-S16
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 11
ER -
