Hybrid devices from single wall carbon nanotubes epitaxially grown into a semiconductor heterostructure
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Hybrid devices from single wall carbon nanotubes epitaxially grown into a semiconductor heterostructure . / Jensen, Ane; Hauptmann, J.R.; Nygård, J.
I: Nano Letters, Bind 4, Nr. 2, 2004, s. 349-352.Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt
Harvard
Jensen, A, Hauptmann, JR & Nygård, J 2004, 'Hybrid devices from single wall carbon nanotubes epitaxially grown into a semiconductor heterostructure ', Nano Letters, bind 4, nr. 2, s. 349-352.
APA
Jensen, A., Hauptmann, J. R., & Nygård, J. (2004). Hybrid devices from single wall carbon nanotubes epitaxially grown into a semiconductor heterostructure . Nano Letters, 4(2), 349-352.
Vancouver
Jensen A, Hauptmann JR, Nygård J. Hybrid devices from single wall carbon nanotubes epitaxially grown into a semiconductor heterostructure . Nano Letters. 2004;4(2):349-352.
Author
Bibtex
@article{c9328e6074c311dbbee902004c4f4f50,
title = "Hybrid devices from single wall carbon nanotubes epitaxially grown into a semiconductor heterostructure ",
abstract = "Udgivelsesdato: 10 jan.",
author = "Ane Jensen and J.R. Hauptmann and J. Nyg{\aa}rd",
note = "Paper id:: doi:10.1021/nl0350027",
year = "2004",
language = "English",
volume = "4",
pages = "349--352",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "2",
}
RIS
TY - JOUR
T1 - Hybrid devices from single wall carbon nanotubes epitaxially grown into a semiconductor heterostructure
AU - Jensen, Ane
AU - Hauptmann, J.R.
AU - Nygård, J.
N1 - Paper id:: doi:10.1021/nl0350027
PY - 2004
Y1 - 2004
N2 - Udgivelsesdato: 10 jan.
AB - Udgivelsesdato: 10 jan.
M3 - Journal article
VL - 4
SP - 349
EP - 352
JO - Nano Letters
JF - Nano Letters
SN - 1530-6984
IS - 2
ER -
ID: 101681