A study of transport suppression in an undoped AlGaAs/GaAs quantum dot single-electron transistor

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A study of transport suppression in an undoped AlGaAs/GaAs quantum dot single-electron transistor. / See, A. M.; Klochan, O.; Micolich, P.; Aagesen, M.; Lindelof, P. E.; Hamilton, A. R.

I: Journal of Physics: Condensed Matter, Bind 25, Nr. 50, 505302, 18.12.2013.

Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt

Harvard

See, AM, Klochan, O, Micolich, P, Aagesen, M, Lindelof, PE & Hamilton, AR 2013, 'A study of transport suppression in an undoped AlGaAs/GaAs quantum dot single-electron transistor', Journal of Physics: Condensed Matter, bind 25, nr. 50, 505302. https://doi.org/10.1088/0953-8984/25/50/505302

APA

See, A. M., Klochan, O., Micolich, P., Aagesen, M., Lindelof, P. E., & Hamilton, A. R. (2013). A study of transport suppression in an undoped AlGaAs/GaAs quantum dot single-electron transistor. Journal of Physics: Condensed Matter, 25(50), [505302]. https://doi.org/10.1088/0953-8984/25/50/505302

Vancouver

See AM, Klochan O, Micolich P, Aagesen M, Lindelof PE, Hamilton AR. A study of transport suppression in an undoped AlGaAs/GaAs quantum dot single-electron transistor. Journal of Physics: Condensed Matter. 2013 dec. 18;25(50). 505302. https://doi.org/10.1088/0953-8984/25/50/505302

Author

See, A. M. ; Klochan, O. ; Micolich, P. ; Aagesen, M. ; Lindelof, P. E. ; Hamilton, A. R. / A study of transport suppression in an undoped AlGaAs/GaAs quantum dot single-electron transistor. I: Journal of Physics: Condensed Matter. 2013 ; Bind 25, Nr. 50.

Bibtex

@article{c1a5d50a94e24fc490b6b2d5a45363c0,
title = "A study of transport suppression in an undoped AlGaAs/GaAs quantum dot single-electron transistor",
abstract = "We report a study of transport blockade features in a quantum dot single-electron transistor, based on an undoped AlGaAs/GaAs heterostructure. We observe suppression of transport through the ground state of the dot, as well as negative differential conductance at finite source-drain bias. The temperature and magnetic field dependences of these features indicate the couplings between the leads and the quantum dot states are suppressed. We attribute this to two possible mechanisms: spin effects which determine whether a particular charge transition is allowed based on the change in total spin, and the interference effects which arise from coherent tunnelling of electrons in the quantum dot.",
author = "See, {A. M.} and O. Klochan and P. Micolich and M. Aagesen and Lindelof, {P. E.} and Hamilton, {A. R.}",
year = "2013",
month = dec,
day = "18",
doi = "10.1088/0953-8984/25/50/505302",
language = "English",
volume = "25",
journal = "Journal of Physics: Condensed Matter",
issn = "0953-8984",
publisher = "Institute of Physics Publishing Ltd",
number = "50",

}

RIS

TY - JOUR

T1 - A study of transport suppression in an undoped AlGaAs/GaAs quantum dot single-electron transistor

AU - See, A. M.

AU - Klochan, O.

AU - Micolich, P.

AU - Aagesen, M.

AU - Lindelof, P. E.

AU - Hamilton, A. R.

PY - 2013/12/18

Y1 - 2013/12/18

N2 - We report a study of transport blockade features in a quantum dot single-electron transistor, based on an undoped AlGaAs/GaAs heterostructure. We observe suppression of transport through the ground state of the dot, as well as negative differential conductance at finite source-drain bias. The temperature and magnetic field dependences of these features indicate the couplings between the leads and the quantum dot states are suppressed. We attribute this to two possible mechanisms: spin effects which determine whether a particular charge transition is allowed based on the change in total spin, and the interference effects which arise from coherent tunnelling of electrons in the quantum dot.

AB - We report a study of transport blockade features in a quantum dot single-electron transistor, based on an undoped AlGaAs/GaAs heterostructure. We observe suppression of transport through the ground state of the dot, as well as negative differential conductance at finite source-drain bias. The temperature and magnetic field dependences of these features indicate the couplings between the leads and the quantum dot states are suppressed. We attribute this to two possible mechanisms: spin effects which determine whether a particular charge transition is allowed based on the change in total spin, and the interference effects which arise from coherent tunnelling of electrons in the quantum dot.

U2 - 10.1088/0953-8984/25/50/505302

DO - 10.1088/0953-8984/25/50/505302

M3 - Journal article

C2 - 24275246

VL - 25

JO - Journal of Physics: Condensed Matter

JF - Journal of Physics: Condensed Matter

SN - 0953-8984

IS - 50

M1 - 505302

ER -

ID: 119289842