Fast Charge Sensing of Si/SiGe Quantum Dots via a High-Frequency Accumulation Gate

Research output: Contribution to journalLetterpeer-review

Standard

Fast Charge Sensing of Si/SiGe Quantum Dots via a High-Frequency Accumulation Gate. / Volk, Christian; Chatterjee, Anasua; Ansaloni, Fabio; Marcus, Charles M.; Kuemmeth, Ferdinand.

In: Nano Letters, Vol. 19, No. 8, 2019, p. 5628-5633.

Research output: Contribution to journalLetterpeer-review

Harvard

Volk, C, Chatterjee, A, Ansaloni, F, Marcus, CM & Kuemmeth, F 2019, 'Fast Charge Sensing of Si/SiGe Quantum Dots via a High-Frequency Accumulation Gate', Nano Letters, vol. 19, no. 8, pp. 5628-5633. https://doi.org/10.1021/acs.nanolett.9b02149

APA

Volk, C., Chatterjee, A., Ansaloni, F., Marcus, C. M., & Kuemmeth, F. (2019). Fast Charge Sensing of Si/SiGe Quantum Dots via a High-Frequency Accumulation Gate. Nano Letters, 19(8), 5628-5633. https://doi.org/10.1021/acs.nanolett.9b02149

Vancouver

Volk C, Chatterjee A, Ansaloni F, Marcus CM, Kuemmeth F. Fast Charge Sensing of Si/SiGe Quantum Dots via a High-Frequency Accumulation Gate. Nano Letters. 2019;19(8):5628-5633. https://doi.org/10.1021/acs.nanolett.9b02149

Author

Volk, Christian ; Chatterjee, Anasua ; Ansaloni, Fabio ; Marcus, Charles M. ; Kuemmeth, Ferdinand. / Fast Charge Sensing of Si/SiGe Quantum Dots via a High-Frequency Accumulation Gate. In: Nano Letters. 2019 ; Vol. 19, No. 8. pp. 5628-5633.

Bibtex

@article{5b6211f25233427b87717c53b04cd006,
title = "Fast Charge Sensing of Si/SiGe Quantum Dots via a High-Frequency Accumulation Gate",
author = "Christian Volk and Anasua Chatterjee and Fabio Ansaloni and Marcus, {Charles M.} and Ferdinand Kuemmeth",
note = "- Marie Sk{\l}odowska-Curie Actions - Nanoscale solid-state spin systems in emerging quantum technologies - Spin-NANO, Grant Agreement Number 676108 - Publication date: “24. July 2019 - Embargo period: 12 months - Nano Letters 19, 5628−5633 (2019), DOI: 10.1021/acs.nanolett.9b02149 - This work received funding from the European Union (EU){\textquoteright}s Horizon 2020 research and innovation programme H2020-ICT-2015 under grant agreement No 688539",
year = "2019",
doi = "10.1021/acs.nanolett.9b02149",
language = "English",
volume = "19",
pages = "5628--5633",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "8",

}

RIS

TY - JOUR

T1 - Fast Charge Sensing of Si/SiGe Quantum Dots via a High-Frequency Accumulation Gate

AU - Volk, Christian

AU - Chatterjee, Anasua

AU - Ansaloni, Fabio

AU - Marcus, Charles M.

AU - Kuemmeth, Ferdinand

N1 - - Marie Skłodowska-Curie Actions - Nanoscale solid-state spin systems in emerging quantum technologies - Spin-NANO, Grant Agreement Number 676108 - Publication date: “24. July 2019 - Embargo period: 12 months - Nano Letters 19, 5628−5633 (2019), DOI: 10.1021/acs.nanolett.9b02149 - This work received funding from the European Union (EU)’s Horizon 2020 research and innovation programme H2020-ICT-2015 under grant agreement No 688539

PY - 2019

Y1 - 2019

U2 - 10.1021/acs.nanolett.9b02149

DO - 10.1021/acs.nanolett.9b02149

M3 - Letter

C2 - 31339321

VL - 19

SP - 5628

EP - 5633

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 8

ER -

ID: 229853089