Sources of negative tunneling magnetoresistance in multilevel quantum dots with ferromagnetic contacts
Research output: Contribution to journal › Journal article › Research › peer-review
We analyze distinct sources of spin-dependent energy level shifts and their impact on the tunneling magnetoresistance (TMR) of interacting quantum dots coupled to collinearly polarized ferromagnetic leads. Level shifts due to virtual charge fluctuations can be quantitatively evaluated within a diagrammatic representation of our transport theory. The theory is valid for multilevel quantum dot systems and we exemplarily apply it to carbon nanotube quantum dots, where we show that the presence of many levels, among them of excited states, can qualitatively influence the TMR effect.
|Journal||Physical Review B Condensed Matter|
|Number of pages||8|
|Publication status||Published - 13 Jan 2012|
- Faculty of Science - Condensed matter physics, Nano electronics