Sources of negative tunneling magnetoresistance in multilevel quantum dots with ferromagnetic contacts

Research output: Contribution to journalJournal articlepeer-review

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Sources of negative tunneling magnetoresistance in multilevel quantum dots with ferromagnetic contacts. / Koller, Sonja; Grifoni, Milena; Paaske, Jens.

In: Physical Review B Condensed Matter, Vol. 85, No. 4, 045313, 13.01.2012.

Research output: Contribution to journalJournal articlepeer-review

Harvard

Koller, S, Grifoni, M & Paaske, J 2012, 'Sources of negative tunneling magnetoresistance in multilevel quantum dots with ferromagnetic contacts', Physical Review B Condensed Matter, vol. 85, no. 4, 045313. https://doi.org/10.1103/PhysRevB.85.045313

APA

Koller, S., Grifoni, M., & Paaske, J. (2012). Sources of negative tunneling magnetoresistance in multilevel quantum dots with ferromagnetic contacts. Physical Review B Condensed Matter, 85(4), [045313]. https://doi.org/10.1103/PhysRevB.85.045313

Vancouver

Koller S, Grifoni M, Paaske J. Sources of negative tunneling magnetoresistance in multilevel quantum dots with ferromagnetic contacts. Physical Review B Condensed Matter. 2012 Jan 13;85(4). 045313. https://doi.org/10.1103/PhysRevB.85.045313

Author

Koller, Sonja ; Grifoni, Milena ; Paaske, Jens. / Sources of negative tunneling magnetoresistance in multilevel quantum dots with ferromagnetic contacts. In: Physical Review B Condensed Matter. 2012 ; Vol. 85, No. 4.

Bibtex

@article{af63f515a126494dbb91b2a8a4f15399,
title = "Sources of negative tunneling magnetoresistance in multilevel quantum dots with ferromagnetic contacts",
abstract = "We analyze distinct sources of spin-dependent energy level shifts and their impact on the tunneling magnetoresistance (TMR) of interacting quantum dots coupled to collinearly polarized ferromagnetic leads. Level shifts due to virtual charge fluctuations can be quantitatively evaluated within a diagrammatic representation of our transport theory. The theory is valid for multilevel quantum dot systems and we exemplarily apply it to carbon nanotube quantum dots, where we show that the presence of many levels, among them of excited states, can qualitatively influence the TMR effect.",
keywords = "Faculty of Science, Condensed matter physics, Nano electronics",
author = "Sonja Koller and Milena Grifoni and Jens Paaske",
year = "2012",
month = jan,
day = "13",
doi = "10.1103/PhysRevB.85.045313",
language = "English",
volume = "85",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",
number = "4",

}

RIS

TY - JOUR

T1 - Sources of negative tunneling magnetoresistance in multilevel quantum dots with ferromagnetic contacts

AU - Koller, Sonja

AU - Grifoni, Milena

AU - Paaske, Jens

PY - 2012/1/13

Y1 - 2012/1/13

N2 - We analyze distinct sources of spin-dependent energy level shifts and their impact on the tunneling magnetoresistance (TMR) of interacting quantum dots coupled to collinearly polarized ferromagnetic leads. Level shifts due to virtual charge fluctuations can be quantitatively evaluated within a diagrammatic representation of our transport theory. The theory is valid for multilevel quantum dot systems and we exemplarily apply it to carbon nanotube quantum dots, where we show that the presence of many levels, among them of excited states, can qualitatively influence the TMR effect.

AB - We analyze distinct sources of spin-dependent energy level shifts and their impact on the tunneling magnetoresistance (TMR) of interacting quantum dots coupled to collinearly polarized ferromagnetic leads. Level shifts due to virtual charge fluctuations can be quantitatively evaluated within a diagrammatic representation of our transport theory. The theory is valid for multilevel quantum dot systems and we exemplarily apply it to carbon nanotube quantum dots, where we show that the presence of many levels, among them of excited states, can qualitatively influence the TMR effect.

KW - Faculty of Science

KW - Condensed matter physics

KW - Nano electronics

U2 - 10.1103/PhysRevB.85.045313

DO - 10.1103/PhysRevB.85.045313

M3 - Journal article

VL - 85

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 4

M1 - 045313

ER -

ID: 36141484