Characterization of top-gated Si/SiGe devices for spin qubit applications
Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review
| Original language | English |
|---|---|
| Title of host publication | 2019 SILICON NANOELECTRONICS WORKSHOP (SNW) |
| Place of Publication | Kyoto, Japan |
| Publisher | IEEE |
| Publication date | 9 Jun 2019 |
| Pages | 111-112 |
| DOIs | |
| Publication status | Published - 9 Jun 2019 |
| Series | IEEE SILICON NANOELECTRONICS WORKSHOP (SNW) |
|---|---|
| ISSN | 2161-4636 |
ID: 234084719