Fabio Ansaloni

Fabio Ansaloni

Postdoc


Publication year:
  1. 2020
  2. Published

    Single-electron control in one- and two-dimensional arrays of silicon quantum dots

    Ansaloni, Fabio, 2020, Niels Bohr Institute, Faculty of Science, University of Copenhagen.

    Research output: Book/ReportPh.D. thesisResearch

  3. 2019
  4. Published

    Characterization of top-gated Si/SiGe devices for spin qubit applications

    Ansaloni, Fabio, Volk, C., Chatterjee, Anasua & Kuemmeth, Ferdinand, 9 Jun 2019, 2019 SILICON NANOELECTRONICS WORKSHOP (SNW). Kyoto, Japan: IEEE, p. 111-112 (IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)).

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

  5. Published

    Fast Charge Sensing of Si/SiGe Quantum Dots via a High-Frequency Accumulation Gate

    Volk, C., Chatterjee, Anasua, Ansaloni, Fabio, Marcus, Charles M. & Kuemmeth, Ferdinand, 2019, In : Nano Letters. 19, 8, p. 5628-5633 6 p.

    Research output: Contribution to journalLetterResearchpeer-review

  6. Published

    Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays

    Hutin, L., Bertrand, B., Chanrion, E., Bohuslavskyi, Heorhii, Ansaloni, Fabio, Yang, T. Y., Michniewicz, J., Niegemann, D. J., Spence, C., Lundberg, T., Chatterjee, Anasua, Crippa, A., Li, J., Maurand, R., Jehl, X., Sanquer, M., Gonzalez-Zalba, M. F., Kuemmeth, Ferdinand, Niquet, Y. M., De Franceschi, S., Urdampilleta, M., Meunier, T. & Vinet, M., 2019, 2019 IEEE International Electron Devices Meeting, IEDM 2019. IEEE, 8993580. (Technical Digest - International Electron Devices Meeting, IEDM, Vol. 2019-December).

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

ID: 168197968