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Influence of the oxide layer for growth of self-assisted InAs nanowires on Si(111). / Madsen, Morten Hannibal; Aagesen, Martin; Krogstrup, Peter; Sørensen, Claus Birger; Nygård, Jesper.
I:
Nanoscale Research Letters, Bind 6, 31.08.2011, s. 516.
Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt
Harvard
Madsen, MH, Aagesen, M
, Krogstrup, P, Sørensen, CB & Nygård, J 2011, '
Influence of the oxide layer for growth of self-assisted InAs nanowires on Si(111)',
Nanoscale Research Letters, bind 6, s. 516.
https://doi.org/10.1186/1556-276X-6-516APA
Madsen, M. H., Aagesen, M.
, Krogstrup, P., Sørensen, C. B., & Nygård, J. (2011).
Influence of the oxide layer for growth of self-assisted InAs nanowires on Si(111).
Nanoscale Research Letters,
6, 516.
https://doi.org/10.1186/1556-276X-6-516Vancouver
Madsen MH, Aagesen M
, Krogstrup P, Sørensen CB, Nygård J.
Influence of the oxide layer for growth of self-assisted InAs nanowires on Si(111).
Nanoscale Research Letters. 2011 aug. 31;6:516.
https://doi.org/10.1186/1556-276X-6-516Author
Madsen, Morten Hannibal ; Aagesen, Martin ; Krogstrup, Peter ; Sørensen, Claus Birger ; Nygård, Jesper. / Influence of the oxide layer for growth of self-assisted InAs nanowires on Si(111). I: Nanoscale Research Letters. 2011 ; Bind 6. s. 516.
Bibtex
@article{375c7bdf4c94495aafb0c841ada76e59,
title = "Influence of the oxide layer for growth of self-assisted InAs nanowires on Si(111)",
author = "Madsen, {Morten Hannibal} and Martin Aagesen and Peter Krogstrup and S{\o}rensen, {Claus Birger} and Jesper Nyg{\aa}rd",
year = "2011",
month = aug,
day = "31",
doi = "10.1186/1556-276X-6-516",
language = "English",
volume = "6",
pages = "516",
journal = "Nanoscale Research Letters",
issn = "1931-7573",
publisher = "SpringerOpen",
}
RIS
TY - JOUR
T1 - Influence of the oxide layer for growth of self-assisted InAs nanowires on Si(111)
AU - Madsen, Morten Hannibal
AU - Aagesen, Martin
AU - Krogstrup, Peter
AU - Sørensen, Claus Birger
AU - Nygård, Jesper
PY - 2011/8/31
Y1 - 2011/8/31
U2 - 10.1186/1556-276X-6-516
DO - 10.1186/1556-276X-6-516
M3 - Journal article
VL - 6
SP - 516
JO - Nanoscale Research Letters
JF - Nanoscale Research Letters
SN - 1931-7573
ER -
