Fast Charge Sensing of Si/SiGe Quantum Dots via a High-Frequency Accumulation Gate

Publikation: Bidrag til tidsskriftLetterForskningfagfællebedømt

Dokumenter

OriginalsprogEngelsk
TidsskriftNano Letters
Vol/bind19
Udgave nummer8
Sider (fra-til)5628-5633
Antal sider6
ISSN1530-6984
DOI
StatusUdgivet - 2019

Bibliografisk note

- Marie Skłodowska-Curie Actions
- Nanoscale solid-state spin systems in emerging quantum technologies - Spin-NANO, Grant Agreement Number 676108
- Publication date: “24. July 2019
- Embargo period: 12 months
- Nano Letters 19, 5628−5633 (2019), DOI: 10.1021/acs.nanolett.9b02149
This work received funding from the European Union (EU)’s Horizon 2020 research and innovation programme H2020-ICT-2015 under grant agreement No 688539

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