p-GaAs Nanowire Metal-Semiconductor Field-Effect Transistors with Near-Thermal Limit Gating
Research output: Contribution to journal › Journal article › peer-review
Original language | English |
---|---|
Journal | Nano Letters |
Volume | 18 |
Issue number | 9 |
Pages (from-to) | 5673-5680 |
Number of pages | 8 |
ISSN | 1530-6984 |
DOIs | |
Publication status | Published - 1 Sep 2018 |
Bibliographical note
[Qdev]
- Nanowire, transistor, MESFET, Schottky gate, p-GaAs
Research areas
ID: 203331830