MBE grown nanorods and nanoplates – Niels Bohr Institute - University of Copenhagen

Niels Bohr Institute > Calendar > 2007 > MBE grown nanorods and...

MBE grown nanorods and nanoplates

Ph.d.-defence: Martin Aagesen

Niels Bohr Institute and Nano-Science Center 

Molecular Beam Epitaxy (MBE) has played a key role in the development of semiconductor nanodevices. Growth of subsequent atomic layers under in situ inspection by Reflection High Energy Electron Diffraction (RHEED) has lead to important concepts like superlattices and 2-dimensional electron gases. New MBE growth modes have continued to being developed; examples are strained layer heterostructures, the Stranski-Kastranov quantum dots and the nonequilibrium GaMnAs epitaxy.

My ph.d. talk will contain results on two new anisotropic growth modes, nanorods and nanoplates, with potentials for physics and applications. The GaAs and InAs nanorod growth is catalyzed by gold nanoparticles and have diameters of 10-100 nm and a length of many µm. The nanorods have crystal plane facetted hexagonal cross section and are perfect single crystals. The InAs and GaAs nanorod growth is studied for different temperatures and substrate types. InAs nanorods containing GaAs segments have also been fabricated. A new type of anisotropic growth of InAs plane-parallel nanoplates of thicknesses 10-100 nm and several µm in lateral extension has been found, and their possible applications will be discussed.